dmn3200u document number: ds31188 rev. 4 - 2 1 of 4 www.diodes.com june 2008 ? diodes incorporated dmn3200u new prod uc t n-channel enhancement mode field effect transistor features ? low on-resistance ? 90 m @ v gs = 4.5v ? 110 m @ v gs = 2.5v ? 200 m @ v gs = 1.5v ? very low gate threshold voltage ? low input capacitance ? esd protected gate ? fast switching speed ? lead, halogen and antimony free, rohs compliant "green" device (notes 2, 3 and 5) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.008 grams (approximate) sot-23 source gate protection diode gate drain d g s esd protected to 3kv top view e q uivalent circuit top view maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 8 v drain current (note 1) i d 2.2 a pulsed drain current (note 1) i dm 9 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 1) p d 650 mw thermal resistance, junction to ambient r ja 192 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 5 a v gs = 8v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs(th) 0.45 ? 1.0 v v ds = v gs , i d = 250 a v gs = 4.5v, i d = 2.2a v gs = 2.5v, i d = 2a static drain-source on-resistance r ds (on) ? 62 70 150 90 110 200 m v gs = 1.5v, i d = 0.67a forward transfer admittance |y fs | ? 5 ? s v ds =5v, i d = 2.2a diode forward voltage (note 4) v sd ? ? 0.9 v v gs = 0v, i s = 1a dynamic characteristics input capacitance c iss ? 290 ? pf output capacitance c oss ? 66 ? pf reverse transfer capacitance c rss ? 35 ? pf v ds = 10v, v gs = 0v f = 1.0mhz notes: 1. device mounted on fr-4 pcb, on minimum recommended pad layout on 2oz. copper pads. 2. no purposefully added lead. halogen and antimony free. 3. diodes inc.?s ?green? policy can be found on our webs ite at http://www.diodes.com /products/lead_free/index.php. 4. short duration pulse test used to minimize self-heating effect. 5. product manufactured with green moldi ng compound and does not contain halogens or sb 2 o 3 fire retardants.
dmn3200u 0 1 2 3 4 5 6 7 8 9 10 fig. 2 typical transfer characteristics v , gate source voltage (v) gs i, d r ain c u r r en t (a) d 0 1 2 3 4 5 6 7 8 9 10 0.511.522.5 3 t = -55c a t = 25c a t = 85c a t = 150c a v = 5v pulsed ds fig. 3 on-resistance vs. drain current & gate voltage 0.01 0.1 1 0.01 0.1 1 10 i , drain-source current (a) d r , static drain-source on-resistance ( ) ds(on) v = 2.5v gs v = 1.5v gs v = 4.5v gs 0.6 0.8 1.2 1.4 1.6 1.8 1.0 fig. 5 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) 0 0.2 0.4 0.6 0.8 1.0 i = 250a d 0 5 10 15 20 25 30 fig. 6 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c oss c rss new product dmn3200u document number: ds31188 rev. 4 - 2 2 of 4 www.diodes.com june 2008 ? diodes incorporated
dmn3200u fig. 7 reverse drain current vs. source-drain voltage 0.0001 0.001 0.01 0.1 1 10 v , source-drain voltage (v) sd i, s dmn3200u document number: ds31188 rev. 4 - 2 3 of 4 www.diodes.com june 2008 ? diodes incorporated new product o u r c e c u r r en t (a) s t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0 0.2 0.4 0.6 0.8 1.0 1.2 ordering information (note 6) part number case packaging DMN3200U-7 sot-23 3000/tape & reel notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf . marking information 32n ym 32n = marking code ym = date code marking y = year ex: u = 2007 m = month ex: 9 = september date code key year 2007 2008 2009 2010 2011 2012 code u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions a m j l d f b c h k g top view sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 f 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm
dmn3200u suggested pad layout dmn3200u document number: ds31188 rev. 4 - 2 4 of 4 www.diodes.com june 2008 ? diodes incorporated new product important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. x e g y c z dimensions value (in mm) z 3.4 g 0.7 x 0.9 y 1.4 c 2.0 e 0.9
|
